Emissivity Measurements and Modeling of Silicon-Related Materials: An Overview

2 New Jersey Institute of Technology, Department of Physics, 161 Warren Street, Newark, New Jersey 07102, U.S.A. 3 To whom correspondence should be addressed. E-mail: [email protected] 4 National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, Colorado 804013393, U.S.A. 5 JDS Uniphase Corporation, 100 Willowbrook Road, Freehold, New Jersey 07728-2879, U.S.A. 6 BTA Technology, 1982A Zanker Road, San Jose, California 95112, U.S.A. An overview of the emissivity measurements and modeling of silicon-related materials is presented. The experimental component of this investigation is based on results obtained utilizing spectral emissometry. An analysis of the comparison of the measured data with other similar approaches is made. In particular, the celebrated work of Sato is revisited to understand the implications of his study. Simulations of the temperature and wavelength dependent emissivity of silicon based on the semiempirical MULTIRAD model are presented. The influence of doping concentration, surface roughness, and coatings on the emissivity of silicon, as a function of temperature, is discussed.